On the Effects of High-K Dielectric RESURF in High-Voltage Bulk FinFETs
High-K dielectric reduced surface field (RESURF) effects in high-voltage bulk FinFETs through three-dimensional simulation are discussed in this paper for the first time.Compared to a planar gate LDMOSFET where the length of the drift region is the Motor Contol Board same, dielectric RESURF significantly increases the optimal implant dose for the d